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SEC EDGAR

美光科技MU

10-K年报美股
报告期
2026-09-03
提交日
2026-10-09
SEC 归档号
0000723125-26-000023
行业
半导体

Filing Summary 报告摘要

报告期 / 提交日 / 归档号 / 关键数字

美国本土公司向 SEC 提交的年度报告:经审计的全年财务报表,外加业务、风险因素与管理层讨论。

报告期
2026-09-03(财年)
提交日
2026-10-09
SEC 归档号
0000723125-26-000023
营业收入
$1331.88亿(同比 +256.3%)
净利润
$849.69亿
经营现金流 - 资本开支
$589.63亿
总资产
$1958.88亿
  • 下面的财务数据是 SEC XBRL 里与这份报告「归档号 + 报告期」精确匹配的那一条,不是最新一期的替代值。

财务数据

Revenue · Profit · Cash Flow · Balance Sheet

Revenue 营业收入

营业收入
$1331.88亿
同比
+256.3%
报告期
2026-09-03
去年同期
$373.78亿

来源:SEC XBRL · RevenueFromContractWithCustomerExcludingAssessedTax

Profit 净利润

净利润
$849.69亿
同比
+895.1%
报告期
2026-09-03
去年同期
$85.39亿

来源:SEC XBRL · NetIncomeLoss

Cash Flow 现金流

经营活动现金流
$896.75亿
投资活动现金流
$-616.41亿
资本开支
$307.12亿
经营现金流 - 资本开支
$589.63亿

来源:SEC XBRL

Balance Sheet 资产负债表

总资产
$1958.88亿
总负债
$575.10亿
股东权益
$1383.78亿
资产负债率
29.4%
净资产收益率
61.4%
时点
2026-09-03

来源:SEC XBRL

Important Events 重要事项

Item 编号与公告分类

Risk Factors 风险因素

节选自 SEC 原文

节选自 SEC 原文的 Risk Factors 章节,未做改写。

节选自 SEC 原文 · 该章节约 180445 字,此处显示前 3000 字

Item 1A. Risk Factors. 6 Table of Contents PART I ITEM 1. BUSINESS Overview We are a global leader in semiconductor memory and storage, powering AI and compute-intensive applications from cloud to edge. With a relentless focus on our customers, technology and product leadership, and manufacturing and operational excellence, our comprehensive portfolio of high-performance DRAM, NAND, and NOR solutions deliver the speed, efficiency, and scale today’s workloads demand, accelerating intelligence to enrich life for all. We manufacture our products at wholly-owned facilities and also utilize subcontractors for certain manufacturing processes. Our global network of manufacturing centers of excellence not only allows us to benefit from scale while streamlining processes and operations, but it also brings together some of the world’s brightest talent to work on the most advanced memory technology. Centers of excellence bring expertise together in one location, providing an efficient support structure for end-to-end manufacturing, with quicker cycle times, in partnership with teams, such as R&D, product development, human resources, procurement, and supply chain. For our locations in Singapore and Taiwan, this is also a combination of bringing fabrication and back-end manufacturing together. We continue to make significant investments to develop proprietary product and process technology, which generally increases bit density per wafer and reduces per-bit manufacturing costs of each generation of product. We continue to introduce new generations of products that offer improved performance characteristics, including higher data transfer rates, higher bandwidth, advanced packaging solutions, lower power consumption, improved read/write reliability, and increased memory density. We face intense competition in the semiconductor memory and storage markets. To remain competitive, we must continuously develop and implement new products and technologies and decrease manufacturing costs in spite of inflationary pressures, changing technologies, rapid market changes, and regulatory uncertainty. Our success is largely dependent on obtaining returns on our R&D investments, efficient utilization of our manufacturing infrastructure, development and integration of advanced product and process technologies, market acceptance of our diversified portfolio of semiconductor-based memory and storage solutions, and efficient capital spending. Products, Market, and Sales Product Technologies Our product portfolio of memory and storage solutions, advanced solutions, and storage platforms is based on our high-performance semiconductor memory and storage technologies, including DRAM, NAND, and NOR. We sell our products through our business units into various markets in numerous forms, including components, modules, SSDs, managed NAND, multi-chip packages, and wafers. Many of our system-level solutions combine NAND, a controller, firmware, and in some cases DRAM. DRAM: DRAM products

在原文里查看该章节

数据来自 SEC EDGAR 与东方财富公开接口,仅供参考,不构成投资建议。投资有风险,决策请以交易所与公司公告原文为准。